T Mori, M Fujiwara, RR Manory, Shimizu, I, T Tanaka, S Miyake
SURFACE & COATINGS TECHNOLOGY 169 528-531 2003年6月
Hafnium oxide thin films were prepared using a high-energy ion beam assisted deposition (IBAD) system. Oxygen ion energy was varied the range of 1-20 keV, which is much wider than those in other IBAD works. The transport ratio (TR), defined as the ratio between the hafnium arrival rate and the oxygen ion dose, was varied at 1 and 10. The substrate was cooled by water. The structures of the films were characterized using X-ray diffraction and the morphology of films was observed by field emission scanning electron microscope. In this research, films with cubic, tetragonal and monoclinic structures, or their mixtures were obtained, and their structures were dependent on ion beam energy and TR. (C) 2003 Elsevier Science B.V. All rights reserved.