Journal of the Vacuum Society of Japan 53(5) 361-363 2010年 [査読有り]
There are two advantageous points for fluorine-doped tin-oxide (FTO) films if used as transparent conducting electrodes
the one is high average transmittance in the wave length region between 400 nm and 1500 nm which is favorable for thin film so...
IEEJ Transactions on Electronics, Information and Systems 130(4) 633-636 2010年 [査読有り]
In order to cope with the depletion of iudium, a strong interest has been recently turned to transparent conducting oxide (TCO) films based on a zinc oxide system. Focusing to this theme, it was tried to fabricate Gallium-doped zinc oxide (GZO) TC...
Journal of the Vacuum Society of Japan 53(3) 203-205 2010年 [査読有り]
Gallium-doped zinc oxide (GZO) thin films have been deposited on Cyclo-Olefin Polymer (COP) substrates at room temperature by pulsed laser deposition (PLD) using FHG of Nd: YAG laser (λ = 266 nm, 1.6 mJ/cm2) and then, thin films were annealed by p...
Journal of the Vacuum Society of Japan 53(3) 200-202 2010年 [査読有り]
Ultra-thin Ga203 doped zinc oxide transparent conduction films was deposited on glass substrates using pulsed laser deposition method by ArF excimer laser λ = 193 nm) at the substrate temperature from 180 to 260 0°C. The film thickness was changed...
Approximately 150 nm-thick Al-doped zinc oxide (AZO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition (PLD) using a split target divided into AZO(Al2O3 : 1 wt.%) and AZO(Al2...
β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabr...
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