ELECTRICAL ENGINEERING IN JAPAN 160(2) 39-45 2007年7月 [査読有り]
beta-FeSi2 thin films were grown on Si(l 11) substrates by pulsed laser deposition (PLD) method using a Nd:YAG laser (lambda = 1064 nm, laser energy = 50 mJ, laser energy 2 density = 1.65 J/cm(2), repetition frequency = 10 Hz). In the fabrication ...
Shinku/Journal of the Vacuum Society of Japan 50(3) 167-169 2007年 [査読有り]
Approximately 30-nm thick iron films were deposited using an iron target with a high purity of 5 nine on glass or polycarbonate substrate by radio-frequency magnetron sputtering, in order to use for media of the write-once disk. The transmittance ...
Al-doped zinc oxide (AZO) or Ga-doped zinc oxide (GZO) films with c-axis orientation have been deposited on glass substrates by pulsed laser deposition (PLD) using an ArF excimer laser (λ= 193 nm) or Nd:YAG laser (λ= 53...
Approximately 150 nm-thick Al-doped zinc oxide (AZO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition (PLD) using a split target divided into AZO(Al2O3 : 1 wt.%) and AZO(Al2...
β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabr...
国際学部
工学部