WO2 films were deposited onto the glass substrates (Corning #7059 with an area of 26 × 38 mm) by the pulsed laser deposition method using an ArF excimer laser. It was found that after annealing at 500 °C for 10 min, the film thickness became 1.9 t...
IEEJ Transactions on Electronics, Information and Systems 126(1) 132-133 2006年 [査読有り]
Approximately 300 nm-thick Al-doped transparent conducting zinc oxide films (AZO(A12O3:1.5wt.%)) have been deposited on glass and PVC substrates by a pulsed laser deposition (PLD) using ArF excimer laser (λ= 93nm) with energy of 40-100 mJ at the r...
Shinku/Journal of the Vacuum Society of Japan 49(3) 150-152 2006年 [査読有り]
Approximately 300-nm-thick 1.5 wt.% Al-doped zinc oxide(AZO: 1.5 wt.% A12O3) films have been deposited on glass substrates and PVC substrates at room temperature by a pulsed laser deposition (PLD) using ArF excimer laser ( λ = 193 nm). The film de...
Shinku/Journal of the Vacuum Society of Japan 49(3) 153-155 2006年 [査読有り]
Approximately 200-nm-thick 1.5 wt.% Al-doped zinc oxide (AZO: 1.5 wt.% Al2O3) films have been deposited on glass substrates at 100°C by pulsed laser deposition (PLD) using the fourth harmonic generation (FHG) of Nd: YAG laser U = 266nm). In order ...
Approximately 150 nm-thick Al-doped zinc oxide (AZO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition (PLD) using a split target divided into AZO(Al2O3 : 1 wt.%) and AZO(Al2...
β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabr...
国際学部
工学部