A series of AZO films were grown on glass substrates by a method of pulsed laser deposition using a split target divided into AZO (Al2O 3: 1 wt.%) and AZO (Al2O3: 2 wt.%). The film deposition took place at a substrate temperature of 230 °C within ...
Shinku/Journal of the Vacuum Society of Japan 46(8) 632-635 2003年 [査読有り]
The thin films of ZnO doped with 4 wt% Ga2O3 were deposited on glass substrates by pulsed laser deposition using an ArF excimer laser (λ = 193 nm). A heated mesh was given was arranged between the target and the substrate. In all experiments, repe...
Approximately 150 nm-thick Al-doped zinc oxide (AZO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition (PLD) using a split target divided into AZO(Al2O3 : 1 wt.%) and AZO(Al2...
β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabr...