IEEJ Transactions on Electronics, Information and Systems 123(11) 1916-1920 2003年 [査読有り]
Al2O3 - doped ZnO (AZO) thin films have been deposited onto glass substrates using the split target consisting of AZO (1 wt%) and AZO (2 wt%) by pulsed laser deposition method with an ArF excimer laser (λ = 193 nm, 15 mj, 10 Hz, 0.75 J/cm2). By ap...
Shinku/Journal of the Vacuum Society of Japan 46(3) 272-275 2003年 [査読有り]
Thin films (∼30 nm thick) with a stack structure (60 layers) of Ga 2O3 and ZnO have been deposited onto glass substrates or polycarbonate disk substrates by a pulsed laser deposition method with an ArF excimer laser using a split target made of Ga...
Shinku/Journal of the Vacuum Society of Japan 46(10) 752-755 2003年 [査読有り]
ZnO doped with 2 wt% and 1 wt% Al2O3 (AZO) films were deposited on glass substrates by pulsed laser deposition method. In all experiments
repetition rates of 10 Hz, the energy density of 0.75-2 J/cm 2, and an ablation time of 15-50 min irrespecti...
Shinku/Journal of the Vacuum Society of Japan 46(3) 237-240 2003年 [査読有り]
Iron disilicide (β-FeSi2) thin films were deposited on Si(100) substrate by a pulsed laser deposition using SHG of a Nd:YAG laser. The film crystallizations were varied by annealing time of β-FeSi2 films irradiated by Nd:YAG laser. From XRD spectr...
Shinku/Journal of the Vacuum Society of Japan 46(3) 233-236 2003年 [査読有り]
β-FeSi2 thin films were deposited on Si (001) substrate by a pulsed laser deposition using an ArF excimer laser. From XRD peaks of the as-deposited films, peaks of β-FeSi2 (400), (600) and (800) were identified. At this time, it was found from FE-...
Approximately 150 nm-thick Al-doped zinc oxide (AZO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition (PLD) using a split target divided into AZO(Al2O3 : 1 wt.%) and AZO(Al2...
β-FeSi2 thin films were grown on Si(111) substrates by pulsed laser deposition (PLD) method using Nd: YAG Laser (λ = 1064 nm, laser energy = 50 mJ, laser energy density = 1.65 J/cm2, repetition frequency = 10 Hz). In the fabr...